Principles of semiconductor solar photovoltaic cell

## What is the equivalent circuit of a solar cell?

admin on October 9, 2021 0 Comments • Tags: #opencircuitvoltageofsolarcell #photocurrent #solarcellequivalentcircuit

The solar cell can be represented by a circuit composed of a series resistance Rs caused by a PN junction diode VD, a constant current source Iph, and an electrode of the solar cell, and a parallel resistance Rsh corresponding to the PN junction leakage current, as shown in Figure 1. It is the equivalent circuit of the solar cell. From the equivalent circuit diagram, the relationship between the current and voltage at both ends of the solar cell can be obtained as

In order to make the solar cell output more power, the series resistance Rs must be reduced as much as possible, and the parallel resistance Rsh must be increased.

Of course, judging from the previous formula, the open circuit voltage of the solar cell is determined by the photogenerated current and the saturation current. As for the ideal
The saturation current Is of the P-N diode can be used

To express. Where q0 represents the unit electricity, ni represents the intrinsic carrier concentration of the semiconductor, ND and NA represent the concentration of donor and acceptor, respectively, Dn and Dp represent the dispersion coefficients of electrons and holes, respectively, τn and τp represent electrons and The recombination time of the electric hole. Of course, the above expression assumes that the N-type area and the P-type area are both wide. Generally, in solar cells using P-type substrates, the N-type area is very shallow, and the above expression needs to be modified.

When light irradiates a solar cell, a photo-generated current is generated, and the photo-generated current is the closed-circuit current in the relationship between the current and voltage of the solar cell. Here we will give a brief description of the origin of the photo-generated current. The generation rate of carriers per unit volume (unit: m﹣3·s-1) is determined by the light absorption coefficient, which is

In the formula, α is the light absorption coefficient; φinc is the incident photon intensity (or called photon flux density); R is the reflection coefficient. Therefore φinc(1-R) represents the intensity of incident photons that are not reflected. The three main mechanisms for the generation of photocurrent IL are: the diffusion current Ip of minority carrier electrons in the P-type region, the diffusion current In of minority carrier holes in the N-type region, and the diffusion of electrons and holes in the space charge region. Drift current Isc. Therefore, the photo-generated current can be expressed as